Specification	FQD9N25TM-F080

Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	55 W, 2.5 W
Rds On (Max) @ Id, Vgs	420 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQD9N25 Series

Part	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [x]	Qualification	Package / Case	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Grade	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQD9N25TM-F085	250 V	MOSFET (Metal Oxide)	20 nC	AEC-Q101	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	N-Channel	420 mOhm	Automotive	Surface Mount	30 V	5 V	10 V	2.5 W 55 W	7.4 A	-55 °C	150 °C	700 pF
ON Semiconductor FQD9N25TM-F080	250 V	MOSFET (Metal Oxide)	20 nC		DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	N-Channel	420 mOhm		Surface Mount	30 V	5 V	10 V	2.5 W 55 W	7.4 A	-55 °C	150 °C	700 pF
ON Semiconductor FQD9N25TM	250 V	MOSFET (Metal Oxide)	20 nC		DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	N-Channel	420 mOhm		Surface Mount	30 V	5 V	10 V	2.5 W 55 W	7.4 A	-55 °C	150 °C	700 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQD9N25 Series

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.