Discrete Semiconductor Products

HAT2299WP-EL-E

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MOSFET N-CH 150V 14A 8WPAK

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Discrete Semiconductor Products

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MOSFET N-CH 150V 14A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	HAT2299WP-EL-E

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	710 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	8-WPAK (3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	FET Type	Technology	Supplier Device Package	Mounting Type	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
Renesas Electronics Corporation HAT2299WP-EL-E	N-Channel	MOSFET (Metal Oxide)	8-WPAK (3)	Surface Mount	8-PowerWDFN	25 W	110 mOhm	30 V	150 V	710 pF	150 °C	10 V	14 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 14A (Ta) 25W (Tc) Surface Mount 8-WPAK (3)

Technical documentation and resources