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Technical Specifications
Parameters and characteristics for this part
| Specification | EMB6T2R |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 68 |
| Frequency - Transition | 250 MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Supplier Device Package | EMT6 |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 8000 | $ 0.08 | |
| 16000 | $ 0.07 | |||
| 24000 | $ 0.07 | |||
| 56000 | $ 0.06 | |||
Description
General part information
EMB6T2 Series
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 30mA 250MHz 150mW Surface Mount EMT6
Documents
Technical documentation and resources
No documents available