Discrete Semiconductor Products

PSMN4R1-30YLC,115

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MOSFET N-CH 30V 92A LFPAK56

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Discrete Semiconductor Products

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MOSFET N-CH 30V 92A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN4R1-30YLC,115

Current - Continuous Drain (Id) @ 25°C	92 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1502 pF
Mounting Type	Surface Mount
Package / Case	SOT-669, SC-100
Power Dissipation (Max) [Max]	67 W
Rds On (Max) @ Id, Vgs	4.35 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Supplier Device Package	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PSMN4R1-30YLC,115	4.5 V 10 V	92 A	20 V	N-Channel	30 V	SC-100 SOT-669	4.35 mOhm	23 nC	1502 pF	MOSFET (Metal Oxide)	Surface Mount	LFPAK56 Power-SO8	67 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 92A (Tc) 67W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources