Discrete Semiconductor Products

SIR862DP-T1-GE3

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MOSFET N-CH 25V 50A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 25V 50A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR862DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	90 nC
Input Capacitance (Ciss) (Max) @ Vds	3800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	5.2 W, 69 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIR862DP-T1-GE3	PowerPAK® SO-8	PowerPAK® SO-8	90 nC	Surface Mount	25 V	5.2 W 69 W	4.5 V 10 V	50 A	-55 °C	150 °C	2.8 mOhm	MOSFET (Metal Oxide)	20 V	2.3 V	N-Channel	3800 pF

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General part information

N-Channel 25 V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources