Deep-Dive with AI
Search across all available documentation for this part.
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RFV8TG6SGC9 |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 45 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-220ACFP |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.64 | |
| 887 | $ 0.64 | |||
Description
General part information
RFV8TG6S Series
RFV8TG6S is the silicon epitaxial planar type Fast Recovery Diode for PFC.
Documents
Technical documentation and resources