Specification	NTB52N10T4G

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	135 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	2 W, 178 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTB52N10 Series

Power MOSFET 100V 52A 30 mOhm Single N-Channel D2PAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Vgs (Max)
ON Semiconductor NTB52N10G	-55 °C	150 °C	52 A	4 V	30 mOhm	10 V	100 V	Surface Mount	2 W 178 W	N-Channel	135 nC	MOSFET (Metal Oxide)	3150 pF	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V
ON Semiconductor NTB52N10T4G	-55 °C	150 °C	52 A	4 V	30 mOhm	10 V	100 V	Surface Mount	2 W 178 W	N-Channel	135 nC	MOSFET (Metal Oxide)	3150 pF	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel Enhancement-Mode D2PAK

Technical documentation and resources