Discrete Semiconductor Products

VBT5200-E3/4W

Active

DIODE SCHOTTKY 200V 5A TO263AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE SCHOTTKY 200V 5A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	VBT5200-E3/4W

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	150 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VBT5200-E3/4W	1.6 V	5 A	200 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AB (D2PAK)	200 mA 500 ns	Surface Mount	150 µA	Schottky	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	8000	$ 0.31

General part information

Diode 200 V 5A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources