Specification	NTD23N03RT4G

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.76 nC
Input Capacitance (Ciss) (Max) @ Vds	225 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	1.14 W, 22.3 W
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTD23N03R Series

Power MOSFET 25V 23A 45 mOhm Single N-Channel DPAK

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
ON Semiconductor NTD23N03R	45 mOhm	4 V 5 V	MOSFET (Metal Oxide)	25 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.76 nC	2 V	-55 °C	150 °C	Surface Mount	DPAK	N-Channel	1.14 W 22.3 W	225 pF	20 V
ON Semiconductor NTD23N03R-001	45 mOhm	4 V 5 V	MOSFET (Metal Oxide)	25 V	IPAK TO-251-3 Short Leads TO-251AA	3.76 nC	2 V	-55 °C	150 °C	Through Hole	IPAK	N-Channel	1.14 W 22.3 W	225 pF	20 V
ON Semiconductor NTD23N03RT4G	45 mOhm	4 V 5 V	MOSFET (Metal Oxide)	25 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.76 nC	2 V	-55 °C	150 °C	Surface Mount	DPAK	N-Channel	1.14 W 22.3 W	225 pF	20 V
ON Semiconductor NTD23N03RG	45 mOhm	4 V 5 V	MOSFET (Metal Oxide)	25 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.76 nC	2 V	-55 °C	150 °C	Surface Mount	DPAK	N-Channel	1.14 W 22.3 W	225 pF	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

23 Amp, 25 Volt MOSFET N-Channel DPAK

Technical documentation and resources