Discrete Semiconductor Products

MCAC40N03A-TP

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MOSFET N-CH 30 40A DFN5060

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Discrete Semiconductor Products

Active

MOSFET N-CH 30 40A DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	MCAC40N03A-TP

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs [Max]	7.5 mOhm
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
Micro Commercial Components MCAC40N03A-TP	Surface Mount	N-Channel	1050 pF	-55 °C	150 °C	20 V	23.5 nC	7.5 mOhm	4.5 V 10 V	MOSFET (Metal Oxide)	35 W	2.5 V	8-PowerTDFN	30 V	DFN5060
Micro Commercial Components MCAC40N10YA-TP	Surface Mount	N-Channel		-55 °C	150 °C	20 V	30.6 nC		10 V	MOSFET (Metal Oxide)	70 W	4 V	8-PowerTDFN	100 V	DFN5060	12 mOhm	1684 pF	40 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 40A (Tc) 35W Surface Mount DFN5060

Technical documentation and resources