PSMNR90-50SLHAX
ActiveN-CHANNEL 50 V, 0.90 MOHM, 410 A LOGIC LEVEL APPLICATION SPECIFIC MOSFET IN LFPAK88
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PSMNR90-50SLHAX
ActiveN-CHANNEL 50 V, 0.90 MOHM, 410 A LOGIC LEVEL APPLICATION SPECIFIC MOSFET IN LFPAK88
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMNR90-50SLHAX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 410 A |
| Drain to Source Voltage (Vdss) | 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 383 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 25001 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1235 |
| Power Dissipation (Max) | 375 W |
| Rds On (Max) @ Id, Vgs | 0.9 mOhm |
| Supplier Device Package | LFPAK88 (SOT1235) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.2 V |
Pricing
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Description
General part information
PSMNR90-50SLH Series
410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe and reliable switching at high load-current.
Documents
Technical documentation and resources