Discrete Semiconductor Products

GI1404-E3/45

Active

DIODE GEN PURP 200V 8A TO220AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 200V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	GI1404-E3/45

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Reverse Recovery Time (trr)	Technology	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division GI1404-E3/45	35 ns	Standard	Through Hole	200 V	TO-220AC	200 mA 500 ns	5 µA	975 mV	150 °C	-65 C	TO-220-2	8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 8A Through Hole TO-220AC

Technical documentation and resources