Discrete Semiconductor Products

SICF1060P-BP

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DIODE SIL CARB 650V 10A ITO220AC

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 10A ITO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	SICF1060P-BP

Capacitance @ Vr, F	452 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	44 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Isolated Tab
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	ITO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Mounting Type	Speed	Capacitance @ Vr, F	Package / Case	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Micro Commercial Components SICF1060P-BP	Through Hole	No Recovery Time	452 pF	TO-220-2 Isolated Tab	10 A	0 ns	650 V	ITO-220AC	44 µA	SiC (Silicon Carbide) Schottky	1.6 V	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 10A Through Hole ITO-220AC

Technical documentation and resources