Discrete Semiconductor Products

SIR140DP-T1-RE3

Active

MOSFET N-CH 25V 71.9A/100A PPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 25V 71.9A/100A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIR140DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	100 A, 71.9 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 104 W
Rds On (Max) @ Id, Vgs	0.67 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Supplier Device Package	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type
Vishay General Semiconductor - Diodes Division SIR140DP-T1-RE3	PowerPAK® SO-8	PowerPAK® SO-8	6.25 W 104 W	2.1 V	25 V	170 nC	71.9 A 100 A	0.67 mOhm	-16 V 20 V	4.5 V 10 V	N-Channel	-55 °C	150 °C	MOSFET (Metal Oxide)	8150 pF	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 25 V 71.9A (Ta), 100A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources