Discrete Semiconductor Products

BAS516,H3F

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DIODE GEN PURP 100V 250MA ESC

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Discrete Semiconductor Products

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DIODE GEN PURP 100V 250MA ESC

Technical Specifications

Parameters and characteristics for this part

Specification	BAS516,H3F

Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	200 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	SC-79, SOD-523
Speed	500 ns, 200 mA
Supplier Device Package	ESC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Diodes, 100 V/0.25 A Switching diode, SOD-523(ESC)

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Speed
Toshiba Semiconductor and Storage BAS516,H3F	250 mA	1.25 V	150 °C	200 nA	SC-79 SOD-523	Surface Mount	100 V	Standard	ESC	200 mA 500 ns
Toshiba Semiconductor and Storage BAS516,L3F	250 mA	1.25 V	150 °C	200 nA	SC-79 SOD-523	Surface Mount	100 V	Standard	ESC	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes, 100 V/0.25 A Switching diode, SOD-523(ESC)

Technical documentation and resources