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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PUMH4/ZLX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 200 |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 300 mW |
| Supplier Device Package | 6-TSSOP |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 150 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
PUMH4 Series
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP
Documents
Technical documentation and resources
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