Discrete Semiconductor Products

SIA445EDJT-T1-GE3

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MOSFET P-CH 20V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 20V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA445EDJT-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	69 nC
Input Capacitance (Ciss) (Max) @ Vds	2180 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	19 W
Rds On (Max) @ Id, Vgs [Max]	16.7 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs [Max]	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIA445EDJT-T1-GE3	1.2 V	-55 °C	150 °C	PowerPAK® SC-70-6 Single	19 W	12 V	12 A	2180 pF	20 V	Surface Mount	2.5 V 4.5 V	MOSFET (Metal Oxide)	16.7 mOhm	P-Channel	PowerPAK® SC-70-6	69 nC

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General part information

P-Channel 20 V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Technical documentation and resources