Discrete Semiconductor Products

BUK7Y7R2-60EX

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MOSFET N-CH 60V LFPAK56 PWR-SO8

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Discrete Semiconductor Products

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MOSFET N-CH 60V LFPAK56 PWR-SO8

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7Y7R2-60EX

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	167 W
Qualification	AEC-Q101
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Qualification	FET Type	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case
Freescale Semiconductor - NXP BUK7Y7R6-40EX	26.2 nC	79 A	MOSFET (Metal Oxide)	40 V	7.6 mOhm	94.3 W	1650 pF	-55 °C	175 ░C	Automotive	AEC-Q101	N-Channel	Surface Mount	20 V	10 V	LFPAK56 Power-SO8	SC-100 SOT-669
Freescale Semiconductor - NXP BUK7Y7R2-60EX		100 A	MOSFET (Metal Oxide)	60 V		167 W		-55 °C	175 ░C	Automotive	AEC-Q101	N-Channel	Surface Mount	20 V	10 V	LFPAK56 Power-SO8	SC-100 SOT-669

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General part information

N-Channel 60 V 100A (Tc) 167W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources