Discrete Semiconductor Products

ES07D-M-08

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DIODE GP 200V 500MA DO219AB

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Discrete Semiconductor Products

Active

DIODE GP 200V 500MA DO219AB

Technical Specifications

Parameters and characteristics for this part

Specification	ES07D-M-08

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	500 mA
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AB (SMF)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Qualification	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Grade	Speed	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Average Rectified (Io)	Supplier Device Package
Vishay General Semiconductor - Diodes Division ES07D-M-08	10 µA	4 pF	AEC-Q101	25 ns	200 V	DO-219AB	Automotive	200 mA 500 ns	Surface Mount	150 °C	-55 °C	Standard	500 mA	DO-219AB (SMF)
Vishay General Semiconductor - Diodes Division ES07B-M-08	10 µA	4 pF	AEC-Q101	25 ns	100 V	DO-219AB	Automotive	200 mA 500 ns	Surface Mount	150 °C	-55 °C	Standard	500 mA	DO-219AB (SMF)
Vishay General Semiconductor - Diodes Division ES07D-M-18	10 µA	4 pF	AEC-Q101	25 ns	200 V	DO-219AB	Automotive	200 mA 500 ns	Surface Mount	150 °C	-55 °C	Standard	500 mA	DO-219AB (SMF)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 500mA Surface Mount DO-219AB (SMF)

Technical documentation and resources