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TO-236AB
Discrete Semiconductor Products

PDTB123YT/APGR

Obsolete
Freescale Semiconductor - NXP

TRANS PREBIAS PNP 50V TO236AB

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TO-236AB
Discrete Semiconductor Products

PDTB123YT/APGR

Obsolete
Freescale Semiconductor - NXP

TRANS PREBIAS PNP 50V TO236AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTB123YT/APGR
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]70
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]250 mW
QualificationAEC-Q101
Resistor - Base (R1)2.2 kOhm
Resistor - Emitter Base (R2)10 kOhms
Supplier Device PackageTO-236AB
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

PDTB123YQA Series

PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Documents

Technical documentation and resources