
Discrete Semiconductor Products
PDTB123YT/APGR
ObsoleteFreescale Semiconductor - NXP
TRANS PREBIAS PNP 50V TO236AB
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

Discrete Semiconductor Products
PDTB123YT/APGR
ObsoleteFreescale Semiconductor - NXP
TRANS PREBIAS PNP 50V TO236AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | PDTB123YT/APGR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 70 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 250 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | TO-236AB |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
PDTB123YQA Series
PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Documents
Technical documentation and resources