Discrete Semiconductor Products

2SK3812(0)-ZP-E1-AY

Active

NCH POWER MOSFET 60V 110A 2.8MOHM TO-263 / D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

NCH POWER MOSFET 60V 110A 2.8MOHM TO-263 / D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3812(0)-ZP-E1-AY

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	16800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	213 W, 1.5 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	TO-263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Nch Power MOSFET 60V 110A 2.8mohm TO-263 / D2PAK

Part	FET Type	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs (Max)
Renesas Electronics Corporation 2SK3812-ZP-E1-AZ	N-Channel	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	2.8 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.5 W 213 W	110 A	2.5 V	60 V	150 °C	16800 pF	TO-263-3	20 V
Renesas Electronics Corporation 2SK3812(0)-ZP-E1-AY	N-Channel	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	2.8 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.5 W 213 W	110 A	2.5 V	60 V	150 °C	16800 pF	TO-263-3	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.54

General part information

The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Technical documentation and resources