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LITTELFUSE LJ6008D8TP

Discrete Semiconductor Products

RD3H200SNFRATL

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Rohm Semiconductor

MOSFET, AEC-Q101, N-CH, 45V, TO-252-3 ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Types and Features of Transistors +31

LITTELFUSE LJ6008D8TP

Discrete Semiconductor Products

RD3H200SNFRATL

Active

Rohm Semiconductor

MOSFET, AEC-Q101, N-CH, 45V, TO-252-3 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Types and Features of Transistors +31

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RD3H200SNFRATL

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	45 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	20 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	28 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.53
		10	$ 1.27
		100	$ 1.01
		500	$ 0.85
		1000	$ 0.73
	Digi-Reel®	1	$ 1.53
		10	$ 1.27
		100	$ 1.01
		500	$ 0.85
		1000	$ 0.73
	Tape & Reel (TR)	2500	$ 0.69
		5000	$ 0.66
		12500	$ 0.64
Newark	Each (Supplied on Cut Tape)	1	$ 1.59
		10	$ 1.31
		25	$ 1.19
		50	$ 1.06
		100	$ 0.94
		250	$ 0.85
		500	$ 0.77
		1000	$ 0.71

Description

General part information

RD3H200SNFRA Series

RD3H200SNFRA is the high reliability Automotive MOSFET, suitable for switching application.

Documents

Technical documentation and resources

Technical Data Sheet EN

Types and Features of Transistors

Application Note

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

How to Create Symbols for PSpice Models

PCB Layout Thermal Design Guide

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

List of Transistor Package Thermal Resistance

Report of SVHC under REACH Regulation

Environmental Data

About Export Regulations

Export Information

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

What Is Thermal Design

Moisture Sensitivity Level - Transistors

Package Information

About Flammability of Materials

Environmental Data

Measurement Method and Usage of Thermal Resistance RthJC

Part Explanation

Application Note

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Inner Structure

Package Information

Package Dimensions

Package Information

Judgment Criteria of Thermal Evaluation

Two-Resistor Model for Thermal Simulation

θ<sub>JA</sub> and Ψ<sub>JT</sub>

What is a Thermal Model? (Transistor)

RD3H200SNFRA ESD Data

Characteristics Data

TO-252_TL Taping Information

Package Information

Reliability Test Result

Manufacturing Data

Method for Monitoring Switching Waveform

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Explanation for Marking

Package Information

RD3H200SNFRA Series

Nch 45V 20A Power MOSFET

Part	Qualification	Supplier Device Package	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Grade	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor RD3H200SNFRATL	AEC-Q101	TO-252	MOSFET (Metal Oxide)	20 W	45 V	2.5 V	N-Channel	28 mOhm	150 °C	4 V	10 V	Automotive	20 V	20 A	Surface Mount	12 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	950 pF