Discrete Semiconductor Products

NP52N055SUG-E1-AY

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MOSFET N-CH 55V 52A TO252

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Discrete Semiconductor Products

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MOSFET N-CH 55V 52A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	NP52N055SUG-E1-AY

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Input Capacitance (Ciss) (Max) @ Vds	3200 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	56 W, 1.2 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	MP-3ZK
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Supplier Device Package	Supplier Device Package	Operating Temperature
Renesas Electronics Corporation NP52N055SUG-E1-AY	N-Channel	4 V	3200 pF	MOSFET (Metal Oxide)	Surface Mount	1.2 W 56 W	52 A	10 V	57 nC	55 V	14 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	MP-3ZK	TO-252	175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 52A (Tc) 1.2W (Ta), 56W (Tc) Surface Mount TO-252 (MP-3ZK)

Technical documentation and resources