FQD4N25TM-WS
ObsoletePOWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 250 V, 3 A, 1.75 Ω, DPAK
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FQD4N25TM-WS
ObsoletePOWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 250 V, 3 A, 1.75 Ω, DPAK
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Technical Specifications
Parameters and characteristics for this part
| Specification | FQD4N25TM-WS |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 5.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 2.5 W, 37 W |
| Rds On (Max) @ Id, Vgs | 1.75 Ohm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FQD4N25 Series
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Documents
Technical documentation and resources