Discrete Semiconductor Products
R6050JNZ4C13
ActiveRohm Semiconductor
600V 50A TO-247, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
R6050JNZ4C13
ActiveRohm Semiconductor
600V 50A TO-247, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | R6050JNZ4C13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 120 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4500 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 615 W |
| Rds On (Max) @ Id, Vgs | 83 mOhm |
| Supplier Device Package | TO-247G |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 491 | $ 15.00 | |
Description
General part information
R6050JNZ4 Series
R6050JNZ4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).
Documents
Technical documentation and resources