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Discrete Semiconductor Products

LGB8204ATH

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LITTELFUSE

IGBT 430V 18A D2PAK

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Power Semiconductor D2PAK Image
Discrete Semiconductor Products

LGB8204ATH

Active
LITTELFUSE

IGBT 430V 18A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationLGB8204ATH
Current - Collector (Ic) (Max) [Max]18 A
Current - Collector Pulsed (Icm)50 A
Input TypeLogic
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power - Max [Max]115 W
Supplier Device PackageD2PAK
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]430 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

Description

General part information

LGB8204ATH Series

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive

Documents

Technical documentation and resources