Discrete Semiconductor Products

DMN2011UTS-13

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Diodes Inc

TRANS MOSFET N-CH 20V 9A 8-PIN TSSOP T/R

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Discrete Semiconductor Products

DMN2011UTS-13

Active

Diodes Inc

TRANS MOSFET N-CH 20V 9A 8-PIN TSSOP T/R

Deep-Dive with AI

DocumentsDatasheet Package PDF +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2011UTS-13

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2248 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

DMN2011UFDF Series

20V N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Configuration	Power - Max [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case [custom]	Package / Case [custom]	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMN2011UFX-7	9.5 mOhm	20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V	2248 pF	V-DFN2050-4	56 nC	4-VFDFN Exposed Pad	12.2 A	2 N-Channel (Dual) Common Drain	2.1 W	Surface Mount
Diodes Inc DMN2011UTS-13		20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V		8-TSSOP	56 nC	8-TSSOP	21 A			Surface Mount	11 mOhm	2248 pF	1.3 W	N-Channel	1.5 V 4.5 V	12 V	0.173 "	4.4 mm
Diodes Inc DMN2011UFDE-7		20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V		U-DFN2020-6 (Type E)	56 nC	6-PowerUDFN	11.7 A			Surface Mount	9.5 mOhm	2248 pF	610 mW	N-Channel	1.5 V 4.5 V	12 V
Diodes Inc DMN2011UFDF-13		20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V		U-DFN2020-6 (Type F)	56 nC	6-UDFN Exposed Pad	14.2 A			Surface Mount	9.5 mOhm	2248 pF	2.1 W	N-Channel	1.5 V 4.5 V	12 V
Diodes Inc DMN2011UFDE-13		20 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1 V		U-DFN2020-6 (Type E)		6-PowerUDFN	11.7 A			Surface Mount	9.5 mOhm	3372 pF	610 mW	N-Channel	1.5 V 4.5 V	12 V			84 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.55
		10	$ 0.47
		100	$ 0.33
		500	$ 0.25
		1000	$ 0.21
	Digi-Reel®	1	$ 0.55
		10	$ 0.47
		100	$ 0.33
		500	$ 0.25
		1000	$ 0.21
	Tape & Reel (TR)	2500	$ 0.16

Description

General part information

DMN2011UFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Documents

Technical documentation and resources

Datasheet

Package PDF

Package File

Recommended Soldering Techniques

Technical Document