Discrete Semiconductor Products

PJA3413_R1_00001

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SOT-23, MOSFET

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Discrete Semiconductor Products

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SOT-23, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJA3413_R1_00001

Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds	522 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs [Max]	82 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Panjit International Inc. PJA3413_R1_00001	MOSFET (Metal Oxide)	7 nC	P-Channel	3.4 A	SC-59 SOT-23-3 TO-236-3	1.8 V 4.5 V	1.25 W	20 V	-55 °C	150 °C	12 V	82 mOhm	SOT-23	1.2 V	522 pF	Surface Mount

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General part information

P-Channel 20 V 3.4A (Ta) 1.25W (Ta) Surface Mount SOT-23

Technical documentation and resources