Discrete Semiconductor Products

NTD15N06L-001

Obsolete

MOSFET N-CH 60V 15A IPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 15A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	NTD15N06L-001

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds	440 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	48 W, 1.5 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
ON Semiconductor NTD15N06L-001	100 mOhm	5 V	20 nC	IPAK	N-Channel	15 A	1.5 W 48 W	Through Hole	MOSFET (Metal Oxide)	15 V	440 pF	-55 °C	175 ░C	IPAK TO-251-3 Short Leads TO-251AA	2 V	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 15A (Ta) 1.5W (Ta), 48W (Tj) Through Hole IPAK

Technical documentation and resources

No documents available