Discrete Semiconductor Products

2SC2712GT1G

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GENERAL PURPOSE AMPLIFIER TRANSISTOR

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Discrete Semiconductor Products

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GENERAL PURPOSE AMPLIFIER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2SC2712GT1G

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Supplier Device Package	SC-59
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

General Purpose Amplifier Transistor

Part	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Supplier Device Package
ON Semiconductor 2SC2712GT1G	SC-59 SOT-23-3 TO-236-3	250 mV	100 nA	200 hFE	NPN	Surface Mount	50 V	200 mW	150 mA	150 °C	SC-59

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	9458	$ 0.03

General part information

Medium Frequency NPN Amplifier Transistor 50V, 200 mA, 80 MHz

Technical documentation and resources