CPC5602CTR
ActiveN-CH DEPL MOSFET 350V 14 OHMS SOT-223 TR/ TR ROHS COMPLIANT: YES
Deep-Dive with AI
Search across all available documentation for this part.
CPC5602CTR
ActiveN-CH DEPL MOSFET 350V 14 OHMS SOT-223 TR/ TR ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | CPC5602CTR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 mA |
| Drain to Source Voltage (Vdss) | 350 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0.35 V |
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 14 Ohm |
| Supplier Device Package | SOT-223 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
CPC5602 Series
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications.
Documents
Technical documentation and resources