Specification	FJN4301RTA

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4700 Ohms
Supplier Device Package	TO-92-3
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

FJN4305R Series

PNP Epitaxial Silicon Transistor with Bias Resistor

Part	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor FJN4305RTA
ON Semiconductor FJN4303RBU	PNP - Pre-Biased	100 mA	300 mV	TO-226-3 TO-92-3	22 kOhms	50 V	100 nA	Through Hole	TO-92-3	200 MHz	56 hFE	22 kOhms
ON Semiconductor FJN4305RTA	PNP - Pre-Biased	100 mA	300 mV	TO-226-3 TO-92-3	4.7 kOhms	50 V	100 nA	Through Hole	TO-92-3	200 MHz		10 kOhms	30 hFE
ON Semiconductor FJN4303RBU	PNP - Pre-Biased	100 mA	300 mV	TO-226-3 TO-92-3	22 kOhms	50 V	100 nA	Through Hole	TO-92-3	200 MHz	56 hFE	22 kOhms
ON Semiconductor FJN4301RTA	PNP - Pre-Biased	100 mA	300 mV	TO-226-3 TO-92-3	4.7 kOhms	50 V	100 nA	Through Hole	TO-92-3	200 MHz	20	4700 Ohms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

Technical documentation and resources