Discrete Semiconductor Products

SQD10N30-330H_GE3

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TRANS MOSFET N-CH 300V 10A 3-PIN(2+TAB) TO-252AA T/R AUTOMOTIVE AEC-Q101

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Discrete Semiconductor Products

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TRANS MOSFET N-CH 300V 10A 3-PIN(2+TAB) TO-252AA T/R AUTOMOTIVE AEC-Q101

Technical Specifications

Parameters and characteristics for this part

Specification	SQD10N30-330H_GE3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	107 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	330 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	4.4 V

Part	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Grade	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id [Max]	Qualification	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SQD10N30-330H_GE3	N-Channel	107 W	10 A	10 V	TO-252AA	300 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	2190 pF	Surface Mount	Automotive	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.4 V	AEC-Q101	330 mOhm

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General part information

N-Channel 300 V 10A (Tc) 107W (Tc) Surface Mount TO-252AA

Technical documentation and resources