
Discrete Semiconductor Products
BC368
ObsoleteON Semiconductor
20V 625MW 85@500MA,1V 1A NPN TO-92(TO-226) BIPOLAR (BJT) ROHS

Discrete Semiconductor Products
BC368
ObsoleteON Semiconductor
20V 625MW 85@500MA,1V 1A NPN TO-92(TO-226) BIPOLAR (BJT) ROHS
Technical Specifications
Parameters and characteristics for this part
| Specification | BC368 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 85 |
| Frequency - Transition | 65 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-92-3 Long Body, TO-226-3 |
| Power - Max [Max] | 625 mW |
| Supplier Device Package | TO-92 |
| Supplier Device Package | TO-226 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| LCSC | Piece | 1 | $ 2.64 | |
| 200 | $ 1.02 | |||
| 500 | $ 0.99 | |||
| 1000 | $ 0.97 | |||
Description
General part information
BC368 Series
This PNP Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the TO-92 package, which is designed for medium power applications.
Documents
Technical documentation and resources