Discrete Semiconductor Products

SIA911EDJ-T1-GE3

Obsolete

MOSFET 2P-CH 20V 4.5A SC70-6

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Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 20V 4.5A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA911EDJ-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Power - Max [Max]	7.8 W
Rds On (Max) @ Id, Vgs	101 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Technology	Package / Case	Configuration	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Feature
Vishay General Semiconductor - Diodes Division SIA911ADJ-T1-GE3	MOSFET (Metal Oxide)	PowerPAK® SC-70-6 Dual	2 P-Channel	6.5 W	-55 °C	150 °C	20 V	Surface Mount	4.5 A	13 nC	1 V	PowerPAK® SC-70-6 Dual	345 pF	116 mOhm
Vishay General Semiconductor - Diodes Division SIA911EDJ-T1-GE3	MOSFET (Metal Oxide)	PowerPAK® SC-70-6 Dual	2 P-Channel	7.8 W	-55 °C	150 °C	20 V	Surface Mount	4.5 A	11 nC	1 V	PowerPAK® SC-70-6 Dual		101 mOhm	Logic Level Gate
Vishay General Semiconductor - Diodes Division SIA911DJ-T1-GE3	MOSFET (Metal Oxide)	PowerPAK® SC-70-6 Dual	2 P-Channel	6.5 W	-55 °C	150 °C	20 V	Surface Mount	4.5 A	12.8 nC	1 V	PowerPAK® SC-70-6 Dual	355 pF	94 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 4.5A 7.8W Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources