Specification	SSM3J35CTC,L3F

Current - Continuous Drain (Id) @ 25°C	250 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	42 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-883, SC-101
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	CST3C
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

SSM3J35 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, CST3C

Part	Rds On (Max) @ Id, Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3J35CTC,L3F	1.4 Ohm	150 °C	250 mA	500 mW	1 V	1.2 V	4.5 V	CST3C	42 pF	P-Channel	MOSFET (Metal Oxide)	SC-101 SOT-883	Surface Mount	20 V	10 V
Toshiba Semiconductor and Storage SSM3J35MFV,L3F	8 Ohm	150 °C	100 mA					VESM	12.2 pF	P-Channel	MOSFET (Metal Oxide)	SOT-723	Surface Mount	20 V		150 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, CST3C

Technical documentation and resources