Specification	TBAT54S,LM

Current - Average Rectified (Io) (per Diode)	200 mA
Current - Reverse Leakage @ Vr	2 çA
Diode Configuration	1 Pair Series Connection
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	1.5 ns
Speed	200 mA
Speed	Any Speed
Supplier Device Package	SOT-23-3
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	580 mV

TBAT54S Series

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOT-23(SOT23)

Part	Voltage - Forward (Vf) (Max) @ If	Diode Configuration	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Mounting Type	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr
Toshiba Semiconductor and Storage TBAT54S,LM	580 mV	1 Pair Series Connection	Schottky	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	Surface Mount	200 mA	30 V	SOT-23-3	200 mA	Any Speed	1.5 ns	2 çA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	3000	$ 0.02
		9000	$ 0.02
Digikey	N/A	65402	$ 0.14

General part information

Diodes, 30 V/0.2 A Schottky Barrier Diode, SOT-23(SOT23)

Technical documentation and resources