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TK62N60W,S1VF
Discrete Semiconductor Products

TK62N60W,S1VF

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.04 Ω@10V, TO-247, DTMOSⅣ

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TK62N60W,S1VF
Discrete Semiconductor Products

TK62N60W,S1VF

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.04 Ω@10V, TO-247, DTMOSⅣ

Technical Specifications

Parameters and characteristics for this part

SpecificationTK62N60W,S1VF
Current - Continuous Drain (Id) @ 25°C61.8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs180 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]6500 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]400 W
Rds On (Max) @ Id, Vgs40 mOhm
Supplier Device PackageTO-247
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id3.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 50$ 19.76

Description

General part information

TK62N60W Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.04 Ω@10V, TO-247, DTMOSⅣ

Documents

Technical documentation and resources

TK62N60W,S1VF | Datasheet

Datasheet

MOSFET Secondary Breakdown

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes

Application Note

Hints and Tips for Thermal Design part3

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter

Application Note

MOSFET Self-Turn-On Phenomenon

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes

Application Note

Motor Control (Vacuum Cleaners)

Application Note

Simplified CFD Model Application Note

Application Note

Resonant Circuits and Soft Switching

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes

Application Note

RC Snubbers for Step-Down Converters

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2

Application Note

Derating of the MOSFET Safe Operating Area

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes

Application Note

MOSFET SPICE model grade

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system

Application Note

Calculating the Temperature of Discrete Semiconductor Devices

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1

Application Note

TK62N60W Data sheet/Japanese

Data sheet

Avalanche energy calculation

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes

Application Note

Electrical Characteristics: Power MOSFET Application Notes

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices

Application Note

Maximum Ratings: Power MOSFET Application Notes

Application Note

Structures and Characteristics: Power MOSFET Application Notes

Application Note

Selection Guide MOSFETs 2025 Rev1.0

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