Discrete Semiconductor Products

IGA03N120H2XKSA1

Obsolete

IGBT 1200V 3A TO220-3-31

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Discrete Semiconductor Products

Obsolete

IGBT 1200V 3A TO220-3-31

Technical Specifications

Parameters and characteristics for this part

Specification	IGA03N120H2XKSA1

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Pulsed (Icm)	9 A
Gate Charge	8.6 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	29 W
Switching Energy	290 µJ
Td (on/off) @ 25°C [Max] [custom]	281 ns
Td (on/off) @ 25°C [Min] [custom]	9.2 ns
Test Condition	82 Ohm, 3 A, 800 V, 15 V
Vce(on) (Max) @ Vge, Ic	2.8 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Gate Charge	Td (on/off) @ 25°C [Max] [custom]	Td (on/off) @ 25°C [Min] [custom]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Test Condition	Package / Case	Switching Energy	Current - Collector Pulsed (Icm)
INFINEON IGA03N120H2XKSA1	8.6 nC	281 ns	9.2 ns	Through Hole	2.8 V	1200 V	3 A	-40 °C	150 °C	29 W	3 A 15 V 82 Ohm 800 V	TO-220-3 Full Pack	290 µJ	9 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT 1200 V 3 A 29 W Through Hole PG-TO220-3-31

Technical documentation and resources