Discrete Semiconductor Products

SIHP25N40D-E3

LTB

MOSFET N-CH 400V 25A TO220AB

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Discrete Semiconductor Products

LTB

MOSFET N-CH 400V 25A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP25N40D-E3

Current - Continuous Drain (Id) (Tc)	25 A, 25 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	88 nC
Input Capacitance (Ciss) (Max)	1707 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	278 W
Rds On (Max)	170 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

Part	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Technology	Current - Continuous Drain (Id) (Tc)	FET Type	Vgs (Max)	Package Name	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)
Vishay Dale SIHP25N40D-E3	5 V	10 V	88 nC	MOSFET (Metal Oxide)	25 A 25 A	N-Channel	30 V	TO-220AB	Through Hole	170 mOhm	-55 °C	150 °C	278 W	TO-220-3	400 V	1707 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+
	Tube	1	$ 4.07	1m+
		10	$ 2.67
		100	$ 1.88

3D models and CAD resources for this part

General part information

N-Channel 400 V 25A (Tc) 278W (Tc) Through Hole TO-220AB

Technical documentation and resources