Specification	CUHS15S30,H3F

Capacitance @ Vr, F	200 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 ¯C
Package / Case	2-SMD, Flat Leads
Speed	500 ns, 200 mA
Supplier Device Package	US2H
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	430 mV

CUHS15 Series

Diodes, 30 V/1.5 A Schottky Barrier Diode, SOD-323HE(US2H)

Part	Speed	Package / Case	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Capacitance @ Vr, F	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If
Toshiba Semiconductor and Storage CUHS15S40,H3F	200 mA 500 ns	2-SMD Flat Leads	150 °C	200 µA	Schottky	1.5 A	Surface Mount	40 V	US2H	170 pF
Toshiba Semiconductor and Storage CUHS15S30,H3F	200 mA 500 ns	2-SMD Flat Leads		500 µA	Schottky	1.5 A	Surface Mount	30 V	US2H	200 pF	150 ¯C	430 mV
Toshiba Semiconductor and Storage CUHS15F30,H3F	200 mA 500 ns	2-SMD Flat Leads		50 µA	Schottky	1.5 A	Surface Mount	30 V	US2H	170 pF	150 ¯C	520 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes, 30 V/1.5 A Schottky Barrier Diode, SOD-323HE(US2H)

Technical documentation and resources