Discrete Semiconductor Products

RMB2S-E3/80

Active

BRIDGE RECT 3P 200V TO269AA

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

BRIDGE RECT 3P 200V TO269AA

Technical Specifications

Parameters and characteristics for this part

Specification	RMB2S-E3/80

Current - Average Rectified (Io)	500 mA
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-BESOP, TO-269AA
Supplier Device Package	TO-269AA (MBS)
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V
Voltage - Peak Reverse (Max) [Max]	200 V

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Supplier Device Package	Diode Type	Technology	Voltage - Peak Reverse (Max) [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division RMB2S-E3/80	500 mA	1.25 V	TO-269AA (MBS)	Single Phase	Standard	200 V	4-BESOP TO-269AA	-55 °C	150 °C	Surface Mount	5 µA
Vishay General Semiconductor - Diodes Division RMB2S-E3/45	500 mA	1.25 V	TO-269AA (MBS)	Single Phase	Standard	200 V	4-BESOP TO-269AA	-55 °C	150 °C	Surface Mount	5 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 200 V Surface Mount TO-269AA (MBS)

Technical documentation and resources