Discrete Semiconductor Products

PH3075L,115

Obsolete

MOSFET N-CH 75V 30A LFPAK56

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 75V 30A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PH3075L,115

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	19 nC
Input Capacitance (Ciss) (Max)	2070 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	75 W
Rds On (Max)	28 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max)	2.3 V

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Vgs(th) (Max)	Mounting Type	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Technology	Rds On (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Package / Case	Vgs (Max)
NXP USA Inc. PH3075L,115	10 V	4.5 V	LFPAK56 Power-SO8	2.3 V	Surface Mount	N-Channel	-55 °C	175 °C	75 W	MOSFET (Metal Oxide)	28 mOhm	19 nC	2070 pF	75 V	30 A	SC-100 SOT-669	15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 75 V 30A (Tc) 75W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources

No documents available