
HMC659LC5TR
ActiveRF AMPLIFIER, 0 HZ TO 15 GHZ, 8.5 V SUPPLY, QFN-32, -40 °C TO 85 °C
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HMC659LC5TR
ActiveRF AMPLIFIER, 0 HZ TO 15 GHZ, 8.5 V SUPPLY, QFN-32, -40 °C TO 85 °C
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC659LC5TR |
|---|---|
| Current - Supply | 300 mA |
| Frequency [Max] | 15 GHz |
| Frequency [Min] | 0 Hz |
| Gain | 19 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 2.5 dB |
| P1dB | 27.5 dBm |
| Package / Case | 32-TFCQFN Exposed Pad |
| RF Type | General Purpose |
| Supplier Device Package | 32-CSMT (5x5) |
| Voltage - Supply | 8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HMC659LC5 Series
The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.ApplicationsTelecom InfrastructureMicrowave Radio & VSATMilitary & SpaceTest InstrumentationFiber Optics
Documents
Technical documentation and resources