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STMICROELECTRONICS STW13NK60Z
Discrete Semiconductor Products

IPW60R170CFD7XKSA1

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INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 170 MOHM; FAST RECOVERY DIODE

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STMICROELECTRONICS STW13NK60Z
Discrete Semiconductor Products

IPW60R170CFD7XKSA1

Active
INFINEON

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 170 MOHM; FAST RECOVERY DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R170CFD7XKSA1
Current - Continuous Drain (Id) @ 25°C14 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC
Input Capacitance (Ciss) (Max) @ Vds1199 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)75 W
Rds On (Max) @ Id, Vgs170 mOhm
Supplier Device PackagePG-TO247-3-21
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 4.10
Tube 1$ 4.51
10$ 2.99
100$ 2.12
500$ 1.75
1000$ 1.65
NewarkEach 1$ 4.94
10$ 4.19
25$ 3.27
50$ 3.24
100$ 3.20
480$ 2.94
720$ 2.52

Description

General part information

IPW60R170 Series

The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Documents

Technical documentation and resources