Discrete Semiconductor Products

SIL2324A-TP

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POWER FIELD-EFFECT TRANSISTOR,

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Discrete Semiconductor Products

Active

POWER FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	SIL2324A-TP

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	SOT-23-6L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Configuration	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
Micro Commercial Components SIL2324A-TP	2 N-Channel (Dual)	2 A	MOSFET (Metal Oxide)	SOT-23-6	520 pF	2 V	-55 °C	150 °C	SOT-23-6L	280 mOhm	Surface Mount	1.5 W	4.8 nC	100 V

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General part information

Mosfet Array 100V 2A 1.5W Surface Mount SOT-23-6L

Technical documentation and resources