LSIC1MO120G0040
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 1.2 KV, 0.04 OHM, TO-247
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LSIC1MO120G0040
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 70 A, 1.2 KV, 0.04 OHM, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | LSIC1MO120G0040 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 317 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 357 W |
| Rds On (Max) @ Id, Vgs | 50 mOhm |
| Supplier Device Package | TO-247-4L |
| Vgs (Max) [Max] | 22 V, -6 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
LSIC1MO120G0040 Series
Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the gate drive circuit. This in turn leads to improvement in efficiency, EMI behavior, and switching performance. The MOSFETs exhibit superior gate oxide reliability and are optimized for switching performance.
Documents
Technical documentation and resources