Discrete Semiconductor Products

SI8451DB-T2-E1

Obsolete

MOSFET P-CH 20V 10.8A 6MICROFOOT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 10.8A 6MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8451DB-T2-E1

Current - Continuous Drain (Id) (Tc)	10.8 A, 10.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	24 nC
Input Capacitance (Ciss) (Max)	750 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-UFBGA
Package Length	1.5 mm
Package Name	6-Micro Foot™
Package Width	1 mm
Power Dissipation (Max)	2.77 W, 13 W
Rds On (Max)	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Package / Case	Mounting Type	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Technology	Power Dissipation (Max)	Rds On (Max)	FET Type	Package Name	Package Length	Package Width	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Vgs(th) (Max)
Vishay Dale SI8451DB-T2-E1	20 V	10.8 A 10.8 A	6-UFBGA	Surface Mount	24 nC	-55 °C	150 °C	750 pF	MOSFET (Metal Oxide)	2.77 W 13 W	80 mOhm	P-Channel	6-Micro Foot™	1.5 mm	1 mm	4.5 V	1.5 V	8 V	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.40	1m+

3D models and CAD resources for this part

General part information

P-Channel 20 V 10.8A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Technical documentation and resources