Discrete Semiconductor Products

VS-35APF12LHM3

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DIODE GEN PURP 1.2KV 35A TO247AD

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Discrete Semiconductor Products

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DIODE GEN PURP 1.2KV 35A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-35APF12LHM3

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SC-65-3, TO-3P-3
Qualification	AEC-Q101
Reverse Recovery Time (trr)	450 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-247AD (TO-3P)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.47 V

Part	Mounting Type	Reverse Recovery Time (trr)	Supplier Device Package	Package / Case	Speed	Qualification	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-35APF12LHM3	Through Hole	450 ns	TO-247AD (TO-3P)	SC-65-3 TO-3P-3	200 mA 500 ns	AEC-Q101	-40 °C	150 °C	35 A	1.47 V	Standard	1.2 kV	Automotive	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 35A Through Hole TO-247AD (TO-3P)

Technical documentation and resources