Discrete Semiconductor Products

BCR166E6327HTSA1

LTB

DIGITAL TRANSISTORS PNP SILICON DIGITAL TRANSISTOR

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Discrete Semiconductor Products

LTB

DIGITAL TRANSISTORS PNP SILICON DIGITAL TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	BCR166E6327HTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	160 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Resistors Included	R1, R2
Supplier Device Package	PG-SOT23
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Resistor - Emitter Base (R2)	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Resistor - Base (R1)	Package / Case	Power - Max [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistors Included
INFINEON BCR166WE6327HTSA1	47 kOhms	100 nA	PNP - Pre-Biased	100 mA	PG-SOT323	300 mV	160 MHz	4.7 kOhms	SC-70 SOT-323	250 mW	Surface Mount	70	50 V
INFINEON BCR166WH6327XTSA1	47 kOhms	100 nA	PNP - Pre-Biased	100 mA	PG-SOT323	300 mV	160 MHz	4.7 kOhms	SC-70 SOT-323	250 mW	Surface Mount	70	50 V
INFINEON BCR166E6327HTSA1	47 kOhms	100 nA	PNP - Pre-Biased	100 mA	PG-SOT23	300 mV	160 MHz	4.7 kOhms	SC-59 SOT-23-3 TO-236-3	200 mW	Surface Mount	70	50 V	R1 R2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 160 MHz 200 mW Surface Mount PG-SOT23

Technical documentation and resources